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[English Market Research Report] Global Market for Porous Silicon Substrates

[English Market Research Report] Global Market for Porous Silicon Substrates

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The global market for porous silicon substrates was valued at approximately 5.1 billion USD in 2021 and is expected to grow at a steady growth rate of over 7.6% during the forecast period from 2022 to 2029. Porous silicon is a single-crystal silicon structure used in batteries, drug delivery, and diagnostics. The surface area, volume, and pore size of porous silicon range from a few nanometers to several hundred nanometers. Due to the Si quantum dot structures created during the coating process, porous Si exhibits a distinct light reflectivity spectrum similar to photonic crystals. Porous silicon substrates have proven to be very important for DIOS as they function as powerful energy mediators that convert light energy into thermal energy, facilitating the desorption and ionization of reduced analytes. Silicon substrates analyze the behavior of cells in microdevices. The rise and expansion of the electronics sector, the increasing demand for porous silicon substrates, and the active research and development are the main factors driving the growth of the porous silicon substrate market.

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SiSi Wafer Solution

SiSi Wafer Solution

Small leaks, high quality, small warps, and low defect density! Offered as a cost-effective material.

We provide customers manufacturing semiconductor devices with Silicon-Silicon bonded wafers as a cost-effective alternative to traditional materials such as thick epitaxial and inverted epitaxial wafers, which have been conventionally used for power devices and PiN diodes. By using direct wafer bonding technology, it is possible to create silicon substrates that include various single crystal silicon types. The resistance range of these materials is from 1 mΩ-cm to 10 kΩ-cm. 【Features】 ■ Orientation direction can be arranged with N-type or P-type materials ■ Low leakage, high quality, minimal warping, and low defect density ■ Variation in layer thickness can be kept to +/-0.5 μm or less ■ Transition levels from high concentration to low concentration can be adjusted sharply or softly according to customer applications *For more details, please refer to the PDF document or feel free to contact us.

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